DocumentCode
2309846
Title
Hydrogenation effects on n+-p InP solar cells
Author
Min, Suk-Ki ; Cho, Hoon Young ; Choi, Won Chel ; Yamaguchi, Masafumi ; Takamoto, Tatsuya
Author_Institution
Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fYear
1993
fDate
10-14 May 1993
Firstpage
639
Lastpage
643
Abstract
This study investigates the effects of hydrogenation on the properties of sulfur (S) diffused n+-p InP solar cells, with a view to improving InP solar cell efficiency. Improvements in homojunction InP solar cell properties by hydrogenation are demonstrated for the first time. Conversion efficiency of an n+-p InP solar cell (2 cm2) with AR coating has been improved from 14.8% to 17.5% at AM0 due to hydrogenation. Deep-level behavior in p-InP caused by hydrogenation is also studied by measuring the carrier concentration and by deep-level transient spectroscopy (DLTS). The mechanism of the hydrogen passivation effects in InP is discussed. The reduction in carrier concentration in the near-surface layer is due to the formation of an acceptor-hydrogen complex
Keywords
III-V semiconductors; carrier density; deep level transient spectroscopy; deep levels; hydrogen; indium compounds; p-n homojunctions; passivation; semiconductor doping; solar cells; 14.8 percent; 17.5 percent; AR coating; InP:H; acceptor-hydrogen complex; carrier concentration; deep-level behavior; deep-level transient spectroscopy; homojunction; hydrogen passivation effects; hydrogenation; n+-p InP solar cells; near-surface layer; semiconductor; Annealing; Hydrogen; Indium phosphide; Ohmic contacts; Passivation; Photonic band gap; Photovoltaic cells; Plasma applications; Plasma temperature; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.347018
Filename
347018
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