DocumentCode
2309922
Title
EOS/ESD reliability of deep sub-micron NMOS protection devices
Author
Ramaswamy, Sridhar ; Duvvury, Charvaka ; Kang, Sung-Mo
Author_Institution
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
fYear
1995
fDate
4-6 April 1995
Firstpage
284
Lastpage
291
Abstract
We have identified new failure mechanisms in EOS/ESD protection circuits for a 0.35 /spl mu/m technology and investigated the effect of process variations on these circuits. We present strategies to improve the performance of these circuits and prevent premature failure of the devices.
Keywords
MOSFET; electrostatic discharge; failure analysis; semiconductor device reliability; semiconductor device testing; 0.35 micron; EOS/ESD reliability; deep sub-micron NMOS protection devices; failure mechanisms; premature failure; process variations; Capacitors; Circuits; Earth Observing System; Electrostatic discharge; Fingers; MOS devices; Pins; Protection; Pulse measurements; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location
Las Vegas, NV
Print_ISBN
0-7803-2031-X
Type
conf
DOI
10.1109/RELPHY.1995.513693
Filename
513693
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