Comparison of the properties of F and Al doped ZnO deposited by magnetron sputtering from ZnO and Zn targets

Author

Zafar, A. ; Karthikeyan, S. ; Morel, D.L.

Author_Institution

Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

555

Lastpage

559

Abstract

Good electronic quality Zn:O films doped with Al and F have been deposited by reactive sputtering. Conductivities as high as as 2400 S/cm have been achieved with optical properties equivalent to films deposited by CVD techniques. In serving as both a dopant and etchant F makes process control more difficult. Reactively sputtered films are also more uniform than those sputtered from ZnO targets. Deposition rates up to 9 Å/s have been achieved without significant deterioration of electro-optic properties

Keywords

II-VI semiconductors; aluminium; electro-optical effects; fluorine; semiconductor doping; semiconductor growth; semiconductor thin films; sputter deposition; sputtered coatings; zinc compounds; ZnO:Al; ZnO:F; dopant; etchant; good electronic quality ZnO films; optical properties; process control; reactive sputtering; semiconductor; Chemical vapor deposition; Conductive films; Conductivity; Doping; Magnetic properties; Magnetic separation; Optical films; Sputtering; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347034

Filename

347034