Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits

The authors propose a generation of high-speed heterostructure devices compatible with a modified MODFET. These devices include a modified MODFET with a buried p-channel, and variable threshold voltage MODFET, a lateral n-p-n bipolar transistor, and a three-terminal planar photodetector called a modulation-doped-field-effect photodetector, (MODFED). These devices can be integrated together and with an optical waveguide. The MODFED has high speed, high collection efficiency, and it may operate in either p-i-n mode with low noise or the avalanche mode with high grain. The gate terminal allows modulation of the photodetector output.<>