DocumentCode
2310300
Title
Multicrystalline silicon solar cells processed by rapid thermal processing
Author
Hartiti, B. ; Slaoui, A. ; Muller, J.C. ; Siffert, P. ; Schindler, R. ; Reis, I. ; Wagner, B. ; Eyer, A.
Author_Institution
Lab. PHASE, Centre de Recherches Nucl., Strasbourg, France
fYear
1993
fDate
10-14 May 1993
Firstpage
224
Lastpage
229
Abstract
In the present work, the authors show that rapid thermal processing (RTP) in a lamp furnace can be successfully used for the manufacturing of multicrystalline silicon solar cells. RTP is carried out on various multicrystalline wafers coated with phosphorus doped silica- films on the front side and pure aluminium on the rear side. Phosphorus concentration profiles and electrical activation were investigated by secondary ion mass spectrometry (SIMS) and sheet resistance measurements, respectively. The influence of RTP on the bulk properties of the multicrystalline wafers were monitored by using the surface photovoltage technique. Finally, 2×2 cm2 test solar cells have been fabricated and characterized by employing dark and illuminated I-V analysis as well as spectral response measurements. The efficiency of the best AR coated cell has been 14.1 % with an open-circuit voltage of 595 mV and a short circuit current of 31.7 mA/cm 2
Keywords
elemental semiconductors; rapid thermal processing; semiconductor device testing; semiconductor doping; silicon; solar cells; 14.1 percent; 2 cm; 595 mV; AR coating; I-V analysis; Si; bulk properties; electrical activation; multicrystalline semiconductor; open-circuit voltage; rapid thermal processing; secondary ion mass spectrometry; sheet resistance measurements; short circuit current; solar cells; spectral response measurements; surface photovoltage technique; wafers; Aluminum; Electrical resistance measurement; Furnaces; Lamps; Manufacturing processes; Mass spectroscopy; Monitoring; Photovoltaic cells; Rapid thermal processing; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.347048
Filename
347048
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