DocumentCode
23105
Title
Status of KERI´s Pulsed Power Research and Development
Author
Geun Hie Rim ; Jongsoo Kim ; Yun-Sik Jin ; Chuhyun Cho ; Hong-Je Ryoo ; Sung-Roc Jang ; Kyung-Ae Cho ; Seong-Jun Hong ; Aboelyousr, Farag K.
Author_Institution
Korea Electrotechnol. Res. Inst., Univ. of Sci. & Technol., Daejun, South Korea
Volume
41
Issue
10
fYear
2013
fDate
Oct. 2013
Firstpage
2584
Lastpage
2592
Abstract
This paper reviews the research and development results achieved in the Korea Electrotechnology Research Institute (KERI) in a decade. KERI develops pulsed power technology and its applications are mostly based on power electronics. KERI´s research and development activity covers components, military systems, and industry applications. High-voltage switching means developed in KERI are a rotary arc gap (RAG) switch (11 kV and 400 kAp), a vacuum RAG (20 kV and 150 kAp), an inverse pinch switch (20 kV and 150 kAp), and 10-kV semiconductor switch stacks made of thyristors and Insulated Gate Bipolar Transistors (IGBTs). The IGBT and thyristor stacks consist of 10 or 12 1.2-kV discrete devices and are operated by only one active drive circuit installed in the groundside. Some ferromagnetic opening switch schemes are also researched on trial bases. Some of KERI´s research and development works from devices to application systems will be described.
Keywords
arcs (electric); driver circuits; power electronics; power semiconductor switches; pulsed power technology; thyristor applications; vacuum switches; IGBT; KERI; Korea Electrotechnology Research Institute; discrete device; drive circuit; ferromagnetic opening switch scheme; high-voltage switching; industry application; insulated gate bipolar transistor; inverse pinch switch; military system; power electronics; pulsed power technology; research and development; rotary arc gap switch; semiconductor switch; thyristor; vacuum RAG switch; voltage 1.2 kV; voltage 10 kV; voltage 11 kV; voltage 20 kV; Capacitors; Electrodes; Insulated gate bipolar transistors; Optical switches; Pulse generation; Thyristors; High-voltage switches; pulsed power applications; solid-state pulsed power modulator;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2013.2268546
Filename
6553115
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