Major improvement in material and device stability of a-Si:H and establishment of high stabilized efficiency of single junction a-Si solar cells

Author

Xi, Jianping ; Liu, Tongyu ; Iafelice, Vincent ; Nugent, Martin ; Si, Kevin ; Cueto, Joe Del ; Ghosh, Malathi ; Kampas, Frank

Author_Institution

Adv. Photovoltaic Syst. Inc., Princeton, NJ, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

821

Lastpage

826

Abstract

Optimizing PECVD processing has further reduced the structural defects in intrinsic a-Si:H films. Using a proprietary technique, photoconductivity-stable, highly photoelectric-sensitive a-Si i-layers have been fabricated. This improved material has been successfully incorporated into high efficiency single junction solar cell devices with significantly improved stability. At present, a stabilized device efficiency of 7.7% has been established

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; p-n homojunctions; plasma CVD; plasma CVD coatings; semiconductor doping; semiconductor thin films; silicon; solar cells; 7.7 percent; Si:H; a-Si:H solar cells; fabrication; photoconductivity; plasma enhanced CVD; single junction; stability; structural defects; thin film semiconductors; Commercialization; Degradation; Laboratories; Large-scale systems; Photovoltaic cells; Photovoltaic systems; Production; Research and development; Stability; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347115

Filename

347115