DocumentCode
2312397
Title
Growth of InAs quantum dot laser structures on silicon
Author
Liu, Alan ; Zhang, Chong ; Gossard, Arthur ; Bowers, John
Author_Institution
Mater. Dept., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
885
Lastpage
886
Abstract
We report on the direct epitaxial growth of InAs quantum dot based laser structures on silicon substrates. Multiple layers of InAs quantum dots serve as the gain region in a III/V broad area laser structure heteroepitaxially grown on silicon. Aspects of the heteroepitaxy and quantum dot growth are examined.
Keywords
III-V semiconductors; epitaxial growth; indium compounds; quantum dot lasers; semiconductor epitaxial layers; III/V broad area laser structure; InAs; InAs quantum dot laser structures; Si; direct epitaxial growth; heteroepitaxial growth; multiple layers; silicon substrates; Gallium arsenide; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Silicon; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6359278
Filename
6359278
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