A novel global planarization technology using defocused resist patterning with blanket stripe mask (DRESS)

Author

Matsubara, Y. ; Akimoto, T. ; Iwasaki, H. ; Ito, S. ; Ishigami, T. ; Noguchi, K. ; Ikawa, E. ; Okumura, K.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

665

Lastpage

668

Abstract

A novel global planarization technology which uses a Defocused Resist patterning with blanket Stripe mask (DRESS) has been developed. DRESS technique consists of the selective formation of the stripe resist pattern on the lower area of the topography, using a blanket stripe mask with a focus on the lower area in order to defocus the resist pattern at the higher area. Using this technique, two global planarization processes were proposed and a remarkable global planarized topology has been achieved for 4-level interconnection with step height as large as 3 /spl mu/m.<>

Keywords

integrated circuit technology; masks; metallisation; photolithography; surface topography; 3 micron; 4-level interconnection; DRESS; IC fabrication; blanket stripe mask; defocused resist patterning; global planarization technology; selective formation; stripe resist pattern; Coatings; Dielectrics; Etching; Filling; Isolation technology; Lithography; Planarization; Plasma applications; Resists; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347224

Filename

347224