Microelectronics manufacturing science and technology (MMST): single-wafer RTP-based 0.35 /spl mu/m CMOS IC fabrication

Author

Moslehi, M. ; Velo, L. ; Paranjpe, A. ; Chapman, R. ; Kuehne, J. ; Yong Jin Lee ; Huang, S. ; Schaper, C. ; Breedijk, T. ; Yin, D. ; Anderson, D. ; Davis, C.

Author_Institution

Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

649

Lastpage

652

Abstract

We have demonstrated the total use of single-wafer processing for fast-cycle-time IC production. Rapid thermal processes have been developed for all the thermal fabrication steps required in two 0.35-/spl mu/m CMOS technologies. Complete CMOS process integration and 3-day CMOS IC manufacturing cycle time have been demonstrated with all-RTP thermal processing.<>

Keywords

CMOS integrated circuits; integrated circuit manufacture; integrated circuit technology; rapid thermal processing; 0.35 micron; CMOS IC fabrication; RTP-based process; fast-cycle-time IC production; rapid thermal processes; single-wafer processing; thermal fabrication steps; CMOS process; CMOS technology; Electrical resistance measurement; Fabrication; MOS devices; Manufacturing; Microelectronics; Microwave sensors; Rapid thermal processing; Thermal sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347228

Filename

347228