Reduction of 1/f noise current with non-equilibrium electron transport in AlInAs/InGaAs heterojunction bipolar transistors

Author

Chen, Y.K. ; Fan, L. ; Humphrey, D.A. ; Tate, A. ; Sivco, D. ; Cho, A.Y.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

803

Lastpage

806

Abstract

We report on the reduction of 1/f noise current by utilizing the non-equilibrium carrier transport in AlInAs/InGaAs HBTs. A 10-dB reduction in the equilibrium input noise current density is obtained by reducing the base thickness from 100 nm to 70 mn for transistors with emitter dimensions of 3/spl times/5 /spl mu/m/sup 2/. As the result, a 1/f noise corner frequency of 1.55 kHz is obtained. This is the lowest 1/f corner frequency amongst any compound semiconductor devices reported to date.<>

Keywords

III-V semiconductors; aluminium compounds; electric noise measurement; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave measurement; random noise; semiconductor device noise; solid-state microwave devices; 1.55 kHz; 1/f noise current; 70 nm; AlInAs-InGaAs; AlInAs/InGaAs; base thickness; corner frequency; emitter dimensions; equilibrium input noise current density; heterojunction bipolar transistors; microwave bipolar transistors; nonequilibrium electron transport; Current density; Cutoff frequency; Electrons; Heterojunction bipolar transistors; Indium gallium arsenide; Integrated circuit noise; Low-frequency noise; Noise figure; Noise reduction; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347277

Filename

347277