Silicon pressure transducers with frequency output on base strain sensitive unijunction transistors

Silicon pressure transducers with frequency output are simulated and designed The sensitive elements of the transducers are strain sensitive unijunction transistors. Two types of strain sensitive unijunction transistors are investigated: simple unijunction transistor (or double-base diode) and unijunction transistor with controlling p-n-junction. The transistors are classed as stress-sensitive semiconductor lateral bipolar devices with an S-type input (emitter) I-V characteristics. Using Fourier method and Green´s function formalism the optimal layout of the devices and their basic parameters are determined. The devices can serve as a basis for designing pressure sensors with physically integrated function of mechanical stress-to-signal frequency conversion at the output.