DocumentCode
2314351
Title
Patterned quantum dot and nanopore lasers
Author
Coleman, J.J.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
101
Lastpage
102
Abstract
The formation of patterned quantum dot lasers and laser results for this type of quantum dot laser are outlined. A novel inverted quantum dot structure or nanopore laser containing three dimensional quantization formed from an engineered periodicity is described.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; nanophotonics; quantum dot lasers; InGaAs; nanopore lasers; patterned quantum dot laser; quantum dot structure; three dimensional quantization; Gallium arsenide; Photonics; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699680
Filename
5699680
Link To Document