Degradation-free Ta/sub 2/O/sub 5/ capacitor after BPSG reflow at 850/spl deg/C for high density DRAMs

Author

Kwon, K.W. ; Park, S.O. ; Kang, C.S. ; Kim, Y.N. ; Ahn, S.T. ; Lee, M.Y.

Author_Institution

Adv. Technol. Center, Samsung Electron. Co. Ltd., Kyungki, South Korea

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

53

Lastpage

56

Abstract

The thermal degradation of the Ta/sub 2/O/sub 5/ capacitor during BPSG reflow has been studied. The cause of deterioration of Ta/sub 2/O/sub 5/ with the TiN top electrode was found to be the oxidation of TiN. By inserting poly-Si between TiN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850/spl deg/C. The Ta/sub 2/O/sub 5/ capacitor with the TiN/poly-Si top electrode was integrated into 64 Mbit DRAMs and excellent leakage current characteristics were obtained.<>

Keywords

DRAM chips; borosilicate glasses; integrated circuit technology; leakage currents; metal-insulator-semiconductor devices; oxidation; phosphosilicate glasses; tantalum compounds; 64 Mbit; 850 C; BPSG reflow; Ta/sub 2/O/sub 5/ capacitor; TiN-Si-B2O3-P2O5-SiO2; TiN-Si-BPSG; TiN/poly-Si top electrode; high density DRAMs; leakage current; oxidation; thermal degradation; Capacitors; Compressive stress; Etching; Leakage current; Plasma measurements; Plasma temperature; Thermal degradation; Thermal expansion; Thermal stresses; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347400

Filename

347400