DocumentCode
2315170
Title
Hydrogen platelet evolution in mechanically strained silicon
Author
Pyke, D.J. ; Elliman, R.G. ; McCallum, J.C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
181
Lastpage
182
Abstract
The effect of intrinsic and applied stress on hydrogen diffusion and trapping are studied by elastic-recoil detection (ERD), Rutherford backscattering and channelling (RBS-C) and transmission electron microscopy (TEM).
Keywords
Rutherford backscattering; diffusion; elemental semiconductors; hydrogen; internal stresses; silicon; transmission electron microscopy; Rutherford backscattering; Rutherford channelling; Si:H; TEM; elastic-recoil detection; hydrogen diffusion; hydrogen platelet; mechanically strained silicon; transmission electron microscopy; trapping; Artificial neural networks; Helium; Image coding;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699728
Filename
5699728
Link To Document