DocumentCode
2315348
Title
A 213 GHz AlInAs/GaInAs/InP HEMT MMIC oscillator
Author
Rosenbaum, S.E. ; Jelloian, L.M. ; Brown, A.S. ; Thompson, M.A. ; Matloubian, M. ; Larson, L.E. ; Lohr, R.F. ; Kormanyos, B.K. ; Rebeiz, G.M. ; Katchi, L.P.B.
Author_Institution
Hughes Res. Labs., Malibu, CA, USA
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
924
Lastpage
926
Abstract
We have fabricated submillimeter-wave MMIC oscillator circuits using AlInAs/GaInAs HEMTs on InP substrates, which have resulted in oscillators operating at fundamental frequencies of 155 and 213 GHz. These results are believed to be the highest frequency three-terminal oscillators reported to date.<>
Keywords
III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; indium compounds; microwave oscillators; submillimetre wave devices; 155 GHz; 213 GHz; AlInAs-GaInAs-InP; AlInAs/GaInAs HEMTs; AlInAs/GaInAs/InP HEMT MMIC oscillator; InP; InP substrates; fundamental frequencies; submillimeter-wave MMIC oscillator circuits; three-terminal oscillators; Antenna measurements; Atherosclerosis; Contracts; HEMTs; Indium phosphide; Integrated circuit technology; Laboratories; MMICs; Oscillators; Planar arrays;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347470
Filename
347470
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