DocumentCode
2315355
Title
Electron-beam induced current measurements of diffusion length in Si doped MOCVD grown GaN
Author
Wee, D. ; Parish, G. ; Nener, B.D.
Author_Institution
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
201
Lastpage
202
Abstract
This paper reports on the electron-beam induced current (EBIC) measurement of minority carrier diffusion length as a function of electron beam acceleration voltage in Si-doped, MOCVD grown, gallium nitride. The measured diffusion length varied from 160nm at 8kV to 220nm at 15kV. Possible reasons for the observed diffusion length dependence on voltage are discussed.
Keywords
EBIC; III-V semiconductors; MOCVD; carrier lifetime; gallium compounds; semiconductor growth; semiconductor thin films; silicon; wide band gap semiconductors; GaN:Si; MOCVD; electron beam acceleration voltage; electron-beam induced current measurements; gallium nitride growth; minority carrier diffusion length; voltage 15 kV; voltage 8 kV; Australia; Current measurement; Gallium nitride; Junctions; Scanning electron microscopy; Semiconductor device measurement; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699739
Filename
5699739
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