DocumentCode
2315808
Title
Growth of GaAs nanowires using different Au catalysts
Author
Xu, H.Y. ; Wang, Y. ; Guo, Y.N. ; Zou, J. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Mater. Eng., Univ. of Queensland, St. Lucia, QLD, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
35
Lastpage
36
Abstract
Two different Au catalysts were used to grow GaAs epitaxial nanowires on GaAs (111)B substrates. Detailed investigations have shown that using Au thin film and annealing technique, it is possible to achieve nanowire growth with much higher density comparing to using Au nanoparticles. It is found that the tapering and lattice defects normally observed in nanowires induced by Au nanoparticles were reduced in the nanowires induced by the Au thin film.
Keywords
III-V semiconductors; annealing; catalysts; epitaxial growth; gallium arsenide; gold; metallic thin films; nanofabrication; nanowires; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wires; vacuum deposition; Au; GaAs; annealing; catalysts; e-beam evaporation; epitaxial nanowires; lattice defects; nanoparticles; nanowires; thin film; vacuum deposition; Gold;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699766
Filename
5699766
Link To Document