DocumentCode
2316537
Title
Semiconductor all-optical buffers using quantum dots in resonator structures
Author
Ku, P. ; Chang-Hasnain, C. ; Kim, J. ; Chuang, S.
Author_Institution
California Univ., Berkeley, CA, USA
fYear
2003
fDate
23-28 March 2003
Firstpage
76
Abstract
A variable semiconductor all-optical buffer is proposed. The buffer uses electromagnetically-induced transparency in quantum dots. With resonator structures, the performance can be further improved. A device storing 168 bits in a 10 Gb/s system can be obtained at room temperature.
Keywords
optical information processing; optical resonators; self-induced transparency; semiconductor quantum dots; semiconductor storage; 10 Gbit/s; 293 to 298 K; electromagnetically-induced transparency buffer; quantum dots; resonator structures; room temperature; variable semiconductor all-optical buffers; Bonding; Lenses; Microoptics; Optical buffering; Optical resonators; Quantum dots; Silicon; Surface-mount technology; US Department of Energy; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN
1-55752-746-6
Type
conf
DOI
10.1109/OFC.2003.1247501
Filename
1247501
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