Coherent and incoherent intersubband dynamics

Author

Muller, T. ; Bratschitsch, R. ; Parz, W. ; Strasser, G. ; Unterrainer, K.

Author_Institution

Inst. for Solid State Electron., Tech. Univ. of Vienna, Austria

fYear

2002

fDate

2002

Firstpage

41

Lastpage

44

Abstract

Presents time-resolved measurements of photoinduced intersubband absorption in an undoped GaAs/AlGaAs coupled quantum well excited by an ultrashort interband optical pulse. An interband pump pulse injects electrons into the first and second subband of an undoped asymmetric double quantum well (ADQW) with a level spacing smaller than the LO phonon energy. The time evolution of the electron population in these two subbands is monitored by probing the MIR intersubband transitions to a third (empty) subband.

Keywords

III-V semiconductors; aluminium compounds; band structure; carrier relaxation time; gallium arsenide; semiconductor quantum wells; time resolved spectra; GaAs-AlGaAs; GaAs/AlGaAs; MIR intersubband transitions; coherent intersubband dynamics; electron population; incoherent intersubband dynamics; interband pump pulse; level spacing; photoinduced intersubband absorption; time evolution; time-resolved measurements; ultrashort interband optical pulse; undoped coupled quantum well; Absorption; Gallium arsenide; Laser beams; Optical pulse generation; Optical pulses; Probes; Pulse measurements; Quantum cascade lasers; Substrates; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on

Print_ISBN

0-7803-7630-7

Type

conf

DOI

10.1109/THZ.2002.1037584

Filename

1037584