DocumentCode
2318347
Title
Intra- and extra-cavity THz generation from optically and electrically confined photoconducting layers [GaAs]
Author
Darmo, J. ; Müller, T. ; Strasser, G. ; Unterraner, K. ; Le, T. ; Tempea, G. ; Stingl, A.
Author_Institution
Inst. for Solid-State Electron., Tech. Univ. of Vienna, Austria
fYear
2002
fDate
2002
Firstpage
67
Lastpage
69
Abstract
A photoconductive terahertz generator with an integrated Bragg mirror is presented. The generator exhibits significantly improved performance. We demonstrate for the first time intra-cavity THz generation using this type of photoconductive emitter.
Keywords
III-V semiconductors; gallium arsenide; microwave photonics; photoconducting devices; submillimetre wave generation; GaAs; biased photoconductive gap; electrically confined photoconducting layers; extra-cavity terahertz generation; integrated Bragg mirror; intra-cavity terahertz generation; photoconductive terahertz generator; Gallium arsenide; Integrated optics; Mirrors; Molecular beam epitaxial growth; Optical modulation; Optical pulse generation; Photoconductivity; Power generation; Substrates; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on
Print_ISBN
0-7803-7630-7
Type
conf
DOI
10.1109/THZ.2002.1037591
Filename
1037591
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