• DocumentCode
    2318492
  • Title

    Transition metal carbide field emitters for FEA devices and high current applications

  • Author

    Mackie, W.A. ; Xie, Tianbao ; Davis, P.R.

  • Author_Institution
    Linfield Res. Inst., McMinnville, OR, USA
  • fYear
    1998
  • fDate
    19-24 July 1998
  • Firstpage
    84
  • Lastpage
    85
  • Abstract
    We report use of transition metal carbides in FEAs and as single emitters for applications including video displays, microwave applications, high current-small spot sources for accelerators and FELs, and cold cathodes for operation in poor vacuum environments. One continued focus is the development of ZrC film coatings for Mo FEAs. Experiments were also conducted using monolithic Mo emitters to better study individual tip interactions. Turn-on voltage lowering by 45% and increased emission stability have been reported for film deposition on Mo FEAs.
  • Keywords
    electron field emission; molybdenum; vacuum microelectronics; zirconium compounds; FEA device; Mo; Mo tip; ZrC; ZrC film coating; field emitter; transition metal carbide; Atmosphere; Cleaning; Coatings; Displays; Field emitter arrays; Geometry; Hydrogen; Robustness; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1998. Eleventh International
  • Conference_Location
    Asheville, NC, USA
  • Print_ISBN
    0-7803-5096-0
  • Type

    conf

  • DOI
    10.1109/IVMC.1998.728651
  • Filename
    728651