DocumentCode
2318492
Title
Transition metal carbide field emitters for FEA devices and high current applications
Author
Mackie, W.A. ; Xie, Tianbao ; Davis, P.R.
Author_Institution
Linfield Res. Inst., McMinnville, OR, USA
fYear
1998
fDate
19-24 July 1998
Firstpage
84
Lastpage
85
Abstract
We report use of transition metal carbides in FEAs and as single emitters for applications including video displays, microwave applications, high current-small spot sources for accelerators and FELs, and cold cathodes for operation in poor vacuum environments. One continued focus is the development of ZrC film coatings for Mo FEAs. Experiments were also conducted using monolithic Mo emitters to better study individual tip interactions. Turn-on voltage lowering by 45% and increased emission stability have been reported for film deposition on Mo FEAs.
Keywords
electron field emission; molybdenum; vacuum microelectronics; zirconium compounds; FEA device; Mo; Mo tip; ZrC; ZrC film coating; field emitter; transition metal carbide; Atmosphere; Cleaning; Coatings; Displays; Field emitter arrays; Geometry; Hydrogen; Robustness; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728651
Filename
728651
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