DocumentCode
2318509
Title
A novel field emitter array technology for sub-half-micron diameter gates
Author
Yoshiki, M. ; Furutake, N. ; Takemura, H. ; Okamoto, A. ; Miyano, S.
Author_Institution
NEC Corp., Sagamihara, Japan
fYear
1998
fDate
19-24 July 1998
Firstpage
86
Lastpage
87
Abstract
We have successfully developed a novel Field Emitter Array (FEA) technology with low-leakage current between each emitter and its sub-half-micron diameter gate. This FEA has 0.38 micron gates, its emission threshold voltage is 24 V, and its leakage current has been reduced to less than a tenth of previous levels.
Keywords
electron field emission; vacuum microelectronics; 0.38 micron; 24 V; field emitter array; leakage current; threshold voltage; Anodes; Fabrication; Field emitter arrays; Insulation; Leakage current; National electric code; Oxidation; Semiconductor films; Threshold voltage; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728652
Filename
728652
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