A de-embedding procedure oriented to the determination of FET intrinsic I-V characteristics from high-frequency large-signal measurements

In this work a de-embedding technique oriented to the determination of FET I-V dynamic characteristics is reported. It exploits high-frequency large-signal measurements and a model based description of the reactive nonlinearities. The proposed technique allows one to gather information about the intrinsic I-V dynamics, including traps related dispersion and thermal phenomena, directly from high-frequency large-signal measurements. Moreover, the actual waveforms exciting the FET active area can be monitored and, for instance, related to the boundaries imposed by reliability issues under dynamic operation. In order to validate the proposed approach, experiments carried out on a gallium nitride HEMT are reported.