DocumentCode
2318519
Title
GaAs edge field emitter arrays fabrication by wet and dry etching
Author
Kropfeld, P. ; Ducroquet, F. ; Yaradou, O. ; Vanoverschelde, A.
Author_Institution
Lille I Univ., Villeneuve d´´Ascq, France
fYear
1998
fDate
19-24 July 1998
Firstpage
88
Lastpage
89
Abstract
Wedge and wall structures were fabricated by wet and dry etching processes. Various emitter shapes were obtained and discussed in terms of emission and integration capabilities.
Keywords
III-V semiconductors; electron field emission; etching; gallium arsenide; vacuum microelectronics; GaAs; GaAs edge field emitter array; dry etching; fabrication; wet etching; Dry etching; Erbium; Fabrication; Field emitter arrays; Gallium arsenide; High power amplifiers; Optical control; Plasma measurements; Shape; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728653
Filename
728653
Link To Document