Continuous wave terahertz quantum cascade laser

Author

Barbieri, Stefano ; Alton, Jesse ; Evans, Michael ; Dhillon, Sukhdeep S. ; Beere, Harvey E. ; Linfield, Edmund H. ; Davies, A. Giles ; Ritchie, David A. ; Köhler, Riideger ; Tredicucci, Alessandro ; Beltram, Fabio

Author_Institution

TeraView Ltd., Cambridge, UK

fYear

2002

fDate

2002

Firstpage

105

Lastpage

108

Abstract

Reports continuous wave operation of a 4.4 THz unipolar injection quantum cascade laser grown in the AlGaAs/GaAs materials system by molecular beam epitaxy. The device operates at 4 K with a threshold current of 160 mA, and an output power of ∼25 μW. In pulsed mode the maximum operating temperature is 52 K with a threshold current of 108 mA at 4 K.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; quantum cascade lasers; semiconductor epitaxial layers; semiconductor growth; submillimetre wave lasers; 108 mA; 160 mA; 25 muW; 4 K; 4.4 THz; 52 K; AlGaAs-GaAs; AlGaAs/GaAs; continuous wave lasers; maximum operating temperature; molecular beam epitaxy; output power; pulsed mode; terahertz quantum cascade laser; threshold current; unipolar injection laser; Frequency; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical materials; Quantum cascade lasers; Semiconductor lasers; Solid lasers; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on

Print_ISBN

0-7803-7630-7

Type

conf

DOI

10.1109/THZ.2002.1037602

Filename

1037602