DocumentCode
2318907
Title
Electron divergence measurements of a Si FEA with extracting grid
Author
Zhirnov, V.V.
Author_Institution
Inst. of Crystallogr., Moscow, Russia
fYear
1998
fDate
19-24 July 1998
Firstpage
124
Lastpage
125
Abstract
In this work we studied the electron divergence of the electron beam emitted from a Si FEA and passed through the split in the extracting electrode. The aim of these studies was to reveal the initial angular distribution of emitted electrons and to analyze the influence of the split edges on electron trajectories.
Keywords
electron field emission; elemental semiconductors; silicon; vacuum microelectronics; Si; Si FEA; angular distribution; electron beam divergence; electron trajectory; extracting grid electrode; split edge; Brightness; Computational Intelligence Society; Crystallography; Current measurement; Data mining; Electrodes; Electron beams; Electron emission; Nuclear physics; Phosphors;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728673
Filename
728673
Link To Document