• DocumentCode
    2319307
  • Title

    Electron emission from polycrystalline silicon field emitter arrays coated with a thin diamond-like carbon layer

  • Author

    Mimura, H. ; Yokoo, K. ; Hashiguchi, G. ; Okada, M. ; Matsumoto, T. ; Tanaka, M.

  • Author_Institution
    Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
  • fYear
    1998
  • fDate
    19-24 July 1998
  • Firstpage
    170
  • Lastpage
    171
  • Abstract
    The emission current has been reported to be highly enhanced for Si and Mo emitters by diamond-like carbon (DLC) coating. The emission mechanism of DLC coated emitters, however, has not been elucidated. Furthermore, since DLC is ordinarily deposited on needle-shaped emitter tips, the shape of the emitter tips may be modified by the DLC coating, e.g., atomic scale kinks are formed on the emitter tips by the coating and the electric field concentration on the tips is enhanced consequently. On the other hand, the mold method using anisotropic etching reproduces the same shape of emitters, because the emitter shape is almost determined by a crystallographic structure of the mold. Therefore, we have employed the transfer mold method to fabricate DLC coated poly-Si emitter arrays. The paper describes enhancement in electron emission from poly-Si emitter arrays by DLC coating and discusses the emission mechanism.
  • Keywords
    carbon; electron field emission; elemental semiconductors; moulding; silicon; vacuum microelectronics; Si-C; diamond-like carbon coating; electron emission; fabrication; polycrystalline silicon field emitter array; transfer mold method; Anisotropic magnetoresistance; Atomic layer deposition; Coatings; Crystallography; Diamond-like carbon; Electron emission; Etching; Field emitter arrays; Shape; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1998. Eleventh International
  • Conference_Location
    Asheville, NC, USA
  • Print_ISBN
    0-7803-5096-0
  • Type

    conf

  • DOI
    10.1109/IVMC.1998.728697
  • Filename
    728697