DocumentCode
2320257
Title
A 5.8 GHz OFDM GaAs MESFET MMIC chip set
Author
Yoo, S. ; Heo, D. ; Lee, C.-H. ; Matinpour, B. ; Chakraborty, S. ; Laskar, J.
Author_Institution
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Volume
3
fYear
2000
fDate
11-16 June 2000
Firstpage
1273
Abstract
This paper presents the implementation of a 5.8 GHz GaAs MESFET MMIC transceiver chip set compatible with the OFDM standard. The receiver is designed for low noise figure and high IIP3. The transmitter is designed to satisfy high peak-to-average power ratio. This design matches closely with the requirements for 5.8 GHz wireless LAN applications. To the best of our knowledge, this research represents the first reported implementation of the OFDM standard at 5.8 GHz.
Keywords
Gallium arsenide; III-V semiconductors; Integrated circuit noise; MESFET integrated circuits; MMIC; OFDM modulation; Transceivers; Wireless LAN; 5.8 GHz; GaAs; IIP3; MESFET MMIC chip set; OFDM; noise figure; peak-to-average power ratio; transceiver; wireless LAN applications; Gallium arsenide; High power amplifiers; Linearity; MESFETs; MMICs; OFDM; Peak to average power ratio; Power amplifiers; Transmitters; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.861752
Filename
861752
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