DocumentCode
2320269
Title
Effect of heat treatment of diamond films on field emission property
Author
Shim, J.Y. ; Chi, E.J. ; Baik, H.K. ; Song, K.M. ; Lee, S.M.
Author_Institution
Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea
fYear
1998
fDate
19-24 July 1998
Firstpage
267
Lastpage
268
Abstract
We have investigated structural and electrical properties of the undoped diamond films prepared by hot filament CVD. It is found that after annealing the as-grown diamond films the resistivity increased significantly due to the dehydrogenation confirmed by FTIR. The field emission property of the as-grown diamond films degraded significantly after annealed in nitrogen ambient. The reason for the degradation is discussed by comparing hydrogen bonding with resistivity.
Keywords
CVD coatings; annealing; diamond; electrical resistivity; electron field emission; C:H; FTIR spectra; annealing; dehydrogenation; diamond film; electrical resistivity; field emission; heat treatment; hot filament CVD; hydrogen bonding; structure; Annealing; Bonding; Conductivity; Electron emission; Heat treatment; Hydrogen; Nitrogen; Solid state circuits; Spectroscopy; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728749
Filename
728749
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