DocumentCode
2320323
Title
Electron emission from etched diamond and its structural analysis
Author
Park, M. ; Choi, W.B. ; McGregor, D.R. ; Bergman, L. ; Nemanich, R.J. ; Hren, J.J. ; Cuomo, J.J.
Author_Institution
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
1998
fDate
19-24 July 1998
Firstpage
271
Lastpage
272
Abstract
Discontinuous diamond films were deposited on silicon by microwave plasma chemical vapor deposition (MPCVD). The diamond films were sharpened by argon ion etching. Field emission turn-on field was drastically lowered after sharpening. Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR) were used for structural characterization. Possible mechanisms of field emission from the etched field emitter are discussed.
Keywords
diamond; electron field emission; plasma CVD coatings; sputter etching; C; Fourier transform infrared spectroscopy; Raman spectroscopy; argon ion etching; discontinuous diamond film; field electron emission; microwave plasma chemical vapor deposition; sharpening; silicon substrate; structural analysis; turn-on field; Argon; Chemical vapor deposition; Electron emission; Etching; Plasma applications; Plasma chemistry; Raman scattering; Semiconductor films; Silicon; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location
Asheville, NC, USA
Print_ISBN
0-7803-5096-0
Type
conf
DOI
10.1109/IVMC.1998.728751
Filename
728751
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