DocumentCode
2320385
Title
2002 International Conference on Molecular Beam Epitaxy (Cat. No.02EX607)
fYear
2002
fDate
15-20 Sept. 2002
Abstract
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original conference proceedings.
Keywords
Ge-Si alloys; molecular beam epitaxial growth; nanotechnology; optoelectronic devices; quantum cascade lasers; semiconductor growth; wide band gap semiconductors; Ge-Si; MBE growth; SiGe heterostructures; antimonide; long wavelength optoelectronic devices; nanopatterning; quantum cascade lasers; self-assembled low-dimensional structures; semiconductor spintronics, heterointerfaces; wide bandgap nitrides;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037730
Filename
1037730
Link To Document