Epitaxial growth of 1.55 /spl mu/m emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications

A lot of knowledge about the formation of InAs or InGaAs quantum dots on GaAs based materials was obtained within the last decade and high quality quantum dot lasers could be realized with emission wavelengths between I and 1.3 /spl mu/m. But the realization of quantum dot lasers well beyond 1.3 /spl mu/m is still difficult. Very recently first device results of self-assembled InAs nanostructures on InP based materials with emission wavelengths between 1.4 and 1.8 /spl mu/m were reported. This new type of quantum dot gain material offers the opportunity to take advantage of dot specific properties like broad band amplification, low threshold current and reduced chirp factor within the long communication wavelength range of 1.45-1.65 /spl mu/m. In this paper the influence of the surface composition and of growth parameters on the formation of InAs quantum dashes and their optical properties is studied. Device data of corresponding quantum dash lasers is presented.