Growth of GaAs based quantum cascade lasers

Author

Strasser, G. ; Schrenk, W. ; Anders, S. ; Pflügl, C. ; Gornik, E.

Author_Institution

Solid State Electron. Inst., Tech. Univ. of Vienna, Austria

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

33

Lastpage

34

Abstract

Quantum cascade lasers (QCLs) based on intersubband/interminiband transitions in InGaAs/InAlAs/InP and GaAs/AlGaAs are unipolar intraband semiconductor lasers. Their wavelength can be tailored over a wide range of frequencies by adapting layer thicknesses of the same material. We report about our latest improvements in the realisation of GaAs based quantum cascade lasers. Intersubband transitions in coupled quantum wells and intraband transitions in a finite chirped superlattice are used to demonstrate lasing.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; infrared spectra; laser transitions; molecular beam epitaxial growth; photoconductivity; photoluminescence; quantum cascade lasers; transmission electron microscopy; GaAs based quantum cascade lasers; GaAs-AlGaAs; InGaAs-InAlAs-InP; adapting layer thicknesses; coupled quantum wells; finite chirped superlattice; intersubband/interminiband transitions; intraband transitions; unipolar intraband semiconductor lasers; Frequency; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Laser transitions; Optical materials; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037746

Filename

1037746