Non-quasi-static nonlinear model for FinFETs using higher-order sources

Author

Homayouni, S.M. ; Schreurs, D. ; Nauwelaers, B. ; Crupi, G.

Author_Institution

Dept. Electr. Eng., Katholieke Univ. Leuven, Leuven

fYear

2008

fDate

24-25 Nov. 2008

Firstpage

13

Lastpage

16

Abstract

A direct analytical extraction of a non-quasi-static nonlinear table-based FET model at mm-wave frequencies is demonstrated in this study. It makes use of extended charge and current sources at both gate and drain terminals to account for the frequency dispersion behavior of transistors at mm-wave frequencies. The model is validated using silicon FinFET transistors. Excellent agreement is achieved between measurements and model simulation revealing significant improvements over quasi-static nonlinear model results.

Keywords

MOSFET; semiconductor device models; FinFET; current sources; direct analytical extraction; extended charge; frequency dispersion behavior; higher order sources; nonquasistatic nonlinear model; Delay effects; FETs; FinFETs; Frequency dependence; Frequency estimation; Polynomials; Power generation; Silicon; Taylor series; Voltage; Non-quasi-static; Silicon FinFET; large-signal; mm-wave frequency; table-based model;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on

Conference_Location

Malaga

Print_ISBN

978-1-4244-2645-4

Electronic_ISBN

978-1-4244-2646-1

Type

conf

DOI

10.1109/INMMIC.2008.4745702

Filename

4745702