Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Author

Thorsell, M. ; Andersson, K. ; Fagerlind, M. ; Südow, M. ; Nilsson, P-Å ; Rorsman, N.

Author_Institution

GHz Centre, Chalmers Univ. of Technol., Goteborg

fYear

2008

fDate

24-25 Nov. 2008

Firstpage

17

Lastpage

20

Abstract

The temperature dependence of the access resistances for AlGaN/GaN HEMTs is investigated. The self-heating is measured using infrared microscopy and the access resistances are extracted at different ambient temperatures. Their influence on the intrinsic small signal parameters is studied versus bias and ambient temperature.

Keywords

aluminium compounds; gallium compounds; high electron mobility transistors; optical microscopy; semiconductor device models; thermal resistance; wide band gap semiconductors; AlGaN-GaN; access resistances; ambient temperature; bias temperature; high electron mobility transistors; infrared microscopy; intrinsic small signal parameters; self-heating; temperature dependence; Aluminum gallium nitride; Electrical resistance measurement; Gallium nitride; HEMTs; MODFETs; Microscopy; Radar; Temperature dependence; Thermal resistance; Transceivers; GaN; HEMT; Modelling; Small signal; Thermal;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on

Conference_Location

Malaga

Print_ISBN

978-1-4244-2645-4

Electronic_ISBN

978-1-4244-2646-1

Type

conf

DOI

10.1109/INMMIC.2008.4745703

Filename

4745703