Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact [111]B GaAs substrates: the effect of an ultrathin GaAs buffer layer

Author

Sugahara, S. ; Tanaka, M.

Author_Institution

Dept. of Electron. Eng., Univ. of Tokyo, Japan

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

119

Lastpage

120

Abstract

Summary form only given. MnAs is an attractive material for semiconductor spintronic devices, since MnAs is a ferromagnetic metal at room temperature and can be epitaxially grown on Si and GaAs substrates. We demonstrate the growth of MnAs/AlAs/MnAs MTJs having flat interface morphology, by the use of a several-monolayer(ML)-thick ultrathin GaAs buffer layer grown on an exact [111]B GaAs substrate. The magnetization (M-H) loop of this MTJ is also presented.

Keywords

III-V semiconductors; aluminium compounds; arsenic alloys; ferromagnetic materials; gallium arsenide; interface magnetism; interface roughness; magnetic tunnelling; magnetisation; magnetoelectronics; manganese alloys; 300 K; GaAs; MTJs; MnAs-AlAs-MnAs; MnAs/AlAs/MnAs magnetic tunnel junctions; epitaxial growth; exact [111]B GaAs substrates; ferromagnetic metal; flat interface morphology; magnetic properties; magnetization; semiconductor spintronic devices; ultrathin GaAs buffer layer; Buffer layers; Epitaxial growth; Gallium arsenide; Inorganic materials; Magnetic materials; Magnetic properties; Magnetic tunneling; Magnetoelectronics; Semiconductor materials; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037788

Filename

1037788