Composition dependence of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy

Author

Beresford, R. ; Lynch, C. ; Chason, E.A.

Author_Institution

Div. of Eng., Brown Univ., Providence, RI, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

135

Abstract

Recent work has confirmed the accuracy of real-time measurements of the stress-thickness product collected using optical monitoring of the wafer curvature during MBE growth. These experiments yield plots of the strain relieved vs. film thickness, thus providing direct comparison with kinetic models of dislocation-mediated relaxation. The present contribution documents the experimental relaxation profile and its change with growth temperature in the range of approximately 400-500/spl deg/C for two values of In composition, x /spl sim/ 0.15 and x /spl sim/ 0.30.

Keywords

III-V semiconductors; dislocations; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; stress relaxation; 400 to 500 degC; InGaAs-GaAs; InGaAs/GaAs; MBE growth; composition dependence; dislocation-mediated strain relaxation; film thickness; growth temperature; heteroepitaxy; relaxation profile; Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Kinetic theory; Molecular beam epitaxial growth; Monitoring; Optical films; Semiconductor device modeling; Stress measurement; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037796

Filename

1037796