Power and thermal design criteria of AlGaN/GaN cascode cell for wideband distributed power amplifier

Author

Martin, A. ; Reveyrand, T. ; Campovecchio, M. ; Quéré, R. ; Jardel, O. ; Piotrowicz, S.

Author_Institution

XLIM MITIC, CNRS, Limoges

fYear

2008

fDate

24-25 Nov. 2008

Firstpage

145

Lastpage

148

Abstract

This paper deals with non-linear modeling of power GaN HEMT and design of power balanced cascode cell for wideband distributed power amplifiers. The active device is a 8times50 mum AlGaN/GaN HEMT grown on SiC substrate. The cascode die is flip-chipped onto an AlN substrate via electrical and mechanical bumps. This GaN-based cascode cell is dedicated to act as the unit power device within a broad-band capacitively-coupled 4-18 GHz distributed amplifier.

Keywords

III-V semiconductors; aluminium compounds; distributed amplifiers; flip-chip devices; gallium compounds; power HEMT; power amplifiers; semiconductor device models; thermal analysis; wide band gap semiconductors; wideband amplifiers; AlGaN-GaN; AlGaN-GaN HEMT; SiC substrate; broad-band capacitively-coupled amplifier; electrical bump; flip chipped device; frequency 4 GHz to 18 GHz; high electron mobility transistor; mechanical bump; nonlinear modeling; power balanced cascode cell design; thermal design criteria; wideband distributed power amplifier; Aluminum gallium nitride; Broadband amplifiers; Distributed amplifiers; Frequency measurement; Gallium nitride; HEMTs; Power amplifiers; Pulse measurements; Scattering parameters; Thermal conductivity; AlGaN/GaN HEMT modelling; balanced cascode cell; flip-chip; gallium nitride;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on

Conference_Location

Malaga

Print_ISBN

978-1-4244-2645-4

Electronic_ISBN

978-1-4244-2646-1

Type

conf

DOI

10.1109/INMMIC.2008.4745738

Filename

4745738