Preparation and evaluation of PbTe-FGM by joining melt-grown materials

Author

Orihashi, Masaki ; Noda, Yasutoshi ; Chen, Lidong ; Kang, Yansheng ; Moro, Akio ; Hirai, Toshio

Author_Institution

Inst. of Mater. Res., Tohoku Univ., Sendai, Japan

fYear

1997

fDate

26-29 Aug 1997

Firstpage

379

Lastpage

381

Abstract

The 2-stage functionally graded materials (FGM) of carrier concentration controlled PbTe were prepared by plasma activated sintering (PAS) using the discs cut from melt-grown PbTe ingots. The component materials of PbTe ingots were prepared by the Bridgman method with 2000 or 4000 molppm PbI₂ as a n-type dopant. The thermoelectric characterization of the FGM was made in the temperature range from 300 to 700 K. The thermoelectric power (α) and the electrical conductivity (σ) for the FGM was almost intermediate between those for the components. In the measured temperature range, the power factor (α²σ) value for the FGM was found to exceed that for the components. This results indicate the possibility to realize high efficiency of energy conversion with the well designed FGM structure

Keywords

IV-VI semiconductors; carrier density; crystal growth from melt; electrical conductivity; lead compounds; power factor; sintering; thermoelectric power; 2-stage functionally graded materials; 300 to 700 K; Bridgman method; PbTe; carrier concentration; electrical conductivity; high efficiency of energy conversion; joining melt-grown materials; plasma activated sintering; power factor; thermoelectric characterization; thermoelectric power; Conducting materials; Conductivity; Energy conversion; Plasma materials processing; Plasma temperature; Power measurement; Reactive power; Temperature distribution; Temperature measurement; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on

Conference_Location

Dresden

ISSN

1094-2734

Print_ISBN

0-7803-4057-4

Type

conf

DOI

10.1109/ICT.1997.667157

Filename

667157