• DocumentCode
    2321711
  • Title

    RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer

  • Author

    Nishio, Susumu ; Nishikawa, Atsushi ; Katayama, Ryuji ; Onabe, Kentaro ; Shhki, Y.

  • Author_Institution
    The University of Tokyo
  • fYear
    2002
  • fDate
    15-20 Sept. 2002
  • Firstpage
    147
  • Lastpage
    148
  • Abstract
    InAsl-xNx epilayers even with x=0.0353 were successhlly grown on GaAs (001) substrates by using the ~0.8μm thick InAs buffer layer. The N concentration was well controlled by altering Tg between 420°C and 510°C. With decreasing Tg the N concentration of the InAsN layer increased. The cross-sectional SEM and AFM images indicate that the fairly flat surface and interface of InAsN epilayer were obtained.
  • Keywords
    Atomic force microscopy; Buffer layers; Gallium arsenide; Nitrogen; Photonic band gap; Plasma temperature; Rough surfaces; Scanning electron microscopy; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Molecular Beam Epitaxy, 2002 International Conference on
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7581-5
  • Type

    conf

  • DOI
    10.1109/MBE.2002.1037802
  • Filename
    1037802
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2321711