DocumentCode
2321877
Title
Rank modulation with multiplicity
Author
Anxiao Jiang ; Yue Wang
Author_Institution
Comput. Sci. & Eng. Dept., Texas A&M Univ., College Station, TX, USA
fYear
2010
fDate
6-10 Dec. 2010
Firstpage
1866
Lastpage
1870
Abstract
Rank modulation is a scheme that uses the relative order of cell levels to represent data. Its applications include flash memories, phase-change memories, etc. An extension of rank modulation is studied in this paper, where multiple cells can have the same rank. We focus on the rewriting of data based on this new scheme, and study its basic properties.
Keywords
error correction codes; flash memories; modulation coding; phase change memories; rewriting systems; data rewriting; multiple cell; multiplicity; rank modulation; Ash; Modulation; Noise; Phase change materials; Phase change memory; Programming; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
GLOBECOM Workshops (GC Wkshps), 2010 IEEE
Conference_Location
Miami, FL
Print_ISBN
978-1-4244-8863-6
Type
conf
DOI
10.1109/GLOCOMW.2010.5700265
Filename
5700265
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