In situ electrical resistivity measurement of self assembled Cu3Si nanowires on Si(111)

Self assembled Copper-Silicide nanowires were fabricated on a 600°C annealed Si(111) substrate by electron beam evaporation technique. In situ scanning electron microscopy images of self assembled Copper-Silicide nanowires and nanoislands were obtained. In situ four point probe electrical resistivity measurements were performed on Copper-Silicide nanowires using Pt-Ir probes. The cross section geometry of a nanowire was studied by transmission electron microscopy technique, which was prepared using a focused ion beam technique. The composition of the nanowire was analyzed with X-ray energy dispersive technique and determined its phase to be Cu3Si. In situ electrical resistivity measurements were performed on two Cu-Si nanowires. The electrical resistivity of one of the nanowire was obtained as ~63 μΩ-cm.