A semi-numerical model for power AlGaAs/GaAs HBTs including self-heating and thermal-coupling companions

Author

Kager, A. ; Liou, J.J. ; Liou, L.L. ; Huang, C.I.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

fYear

1994

fDate

20-25 Jun 1994

Firstpage

463

Abstract

A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is presented. The model consists of an analytical model applicable for the single-finger HBT and a numerical program which solves the three-dimensional heat transfer equations. Experimentally observed thermally-limited I-V characteristics like the negative conductance and current crush phenomenon are accurately described by the model

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heat transfer; heterojunction bipolar transistors; p-n heterojunctions; power transistors; semiconductor device models; AlGaAs-GaAs; current crush phenomenon; multiple-emitter finger heterojunction bipolar transistor; negative conductance; power AlGaAs/GaAs heterojunction bipolar transistor; self-heating; semi-numerical model; thermal-coupling; thermally-limited I-V characteristics; three-dimensional heat transfer equations; Analytical models; Current density; Equations; Fingers; Gallium arsenide; Heat transfer; Heterojunction bipolar transistors; Temperature; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE

Conference_Location

Taipei

Print_ISBN

0-7803-1859-5

Type

conf

DOI

10.1109/PESC.1994.349694

Filename

349694