DocumentCode
2322636
Title
Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulphur source
Author
David, L. ; Bradford, C. ; Tang, X. ; Graham, T.C.M. ; Prior, K.A. ; Cavenett, B.C.
Author_Institution
Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
261
Lastpage
262
Abstract
Many potentially interesting semiconductor compounds do not have the usual zinc blende (ZB) or wurtzite crystal structures as their lowest energy configuration. In some, the atomic coordination number is six, rather than four, and the stable crystal structures are NaCl or NiAs, e.g. the first row transition metal sulphides and other ionic sulphides such as MgS.
Keywords
II-VI semiconductors; crystal structure; manganese compounds; molecular beam epitaxial growth; semiconductor growth; MnS; MnS heterostructures; S source; ZnS; atomic coordination number; energy configuration; molecular beam epitaxy; stable crystal structures; wurtzite crystal structures; zinc blende crystal structures; Atomic measurements; Buffer layers; Gallium arsenide; Interference; Lattices; Metastasis; Physics; Substrates; Temperature; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037859
Filename
1037859
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