Surfactant enhanced growth of GaNAs and InGaNAs using a Bi flux

Author

Adamcyk, M. ; Ballestad, A. ; Schmid, J.H. ; Tiedje, T. ; Tixier, S. ; Young, E.C. ; Fink, V. ; Kavanagh, K.L. ; Koveshnikov, A.

Author_Institution

Adv. Mater. & Process Eng. Lab., British Columbia Univ., Vancouver, BC, Canada

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

275

Lastpage

276

Abstract

InGaNAs containing a dilute amount of nitrogen is a promising new material for fabricating optoelectronic devices in the 1.3 - 1.55 /spl mu/m wavelength range on GaAs substrates, in particular as the active material for vertical cavity surface emitting lasers. Recent edge-emitting InGaNAs lasers have demonstrated an improvement in both threshold currents and characteristic temperatures over those of an InP based reference laser. A flux of bismuth was applied during the growth of InGaNAs quantum wells and bulk GaNAs layers by elemental source MBE.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; rough surfaces; semiconductor quantum wells; surface emitting lasers; surface topography; 1.3 to 1.55 micron; Bi; Bi flux; GaAs; GaAs substrates; GaNAs; InGaNAs; InGaNAs quantum wells; bulk GaNAs layers; characteristic temperatures; edge-emitting InGaNAs lasers; elemental source molecular beam epitaxy; optoelectronic devices; photoluminescence intensity; surface roughness; surfactant enhanced growth; threshold currents; vertical cavity surface emitting lasers; wavelength range; Bismuth; Gallium arsenide; Nitrogen; Optical materials; Optoelectronic devices; Quantum well lasers; Surface emitting lasers; Surface waves; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037866

Filename

1037866