Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy

Summary form only given. Semiconductor quantum dot (QDs) structures have received increasing attention over the last few years because they are expected to lead to significant improvements in optical and electronic device applications. Nowadays, all efforts in this area are directed toward controlling sizes, densities and the spatial arrangement of QDs, since all of these are crucial factors on the effectiveness of QD-based optoelectronic devices. In this work, we investigated the effects induced by Si during the formation of self-assembled InAs QDs. The samples were prepared in a Riber 32D MBE system. AFM and photoluminescence were used to characterize the samples.