DocumentCode
2323595
Title
Growth conditions in molecular beam epitaxy for controlling CdSeTe-epilayer composition
Author
Matsumura, Nobuo ; Sakamoto, Takuya ; Saraie, Junji
Author_Institution
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
383
Lastpage
384
Abstract
Summary form only given. CdSe/sub x/Te/sub 1-x//ZnSe quantum-dots structures have a large conduction and valence band offset at an appropriate composition and are expected to be highly-efficient light-emitting material in the green region. However, to our knowledge, there have been very few reports on CdSeTe epilayers. Composition control of II-VI/sub x/VI/sub 1-x/ mixed crystals is difficult because the vapor pressures of VIth elements are high. In this report, the growth conditions were studied for controlling CdSeTe-epilayer composition.
Keywords
II-VI semiconductors; cadmium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; CdSeTe; CdSeTe-epilayer composition; growth conditions; molecular beam epitaxy; Atomic beams; Crystalline materials; Design engineering; Information science; Materials science and technology; Molecular beam epitaxial growth; Surface reconstruction; Tellurium; X-ray diffraction; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037920
Filename
1037920
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