Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs

Author

Ku, K.C. ; Chun, S.H. ; Wang, W.H. ; Issadore, D.A. ; Samarth, N. ; Epstein, R.J. ; Awschalom, D.D.

Author_Institution

Dept. of Phys., Pennsylvania State Univ., University Park, PA, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

411

Lastpage

412

Abstract

Summary form only given. To explore the effect of different crystallographic orientations on electron spin relaxation processes in semiconductors, we investigate the MBE-growth, optical and electrical transport properties of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAs substrates. Unlike the growth on [001] GaAs substrates, smooth ZnSe epilayers cannot be grown directly on a thermally cleaned [110] GaAs surface. However, upon a low-temperature grown GaAs layer, the macroscopic morphological undulations due to misfit dislocations during [110] growth are significantly reduced, enabling the realization of two-dimensional electron gases of reasonable quality. The optimal growth protocols required for successful growth of [110] ZnSe/(Zn,Cd)Se quantum wells are discussed in detail. We demonstrate the fabrication of quantum wells and two-dimensional electron gases (2DEGs) of quality comparable to that obtained during [001] growth. Time resolved Faraday rotation measurements demonstrate an extended electronic spin lifetime at low temperatures.

Keywords

Faraday effect; II-VI semiconductors; cadmium compounds; dislocations; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; substrates; time resolved spectra; two-dimensional electron gas; zinc compounds; 2DEG; GaAs; MBE-growth; ZnSe-ZnCdSe; [110] GaAs; [110] GaAs substrates; crystallographic orientation effects; electrical transport properties; electron spin relaxation; electronic spin lifetime; low temperatures; low-temperature grown GaAs layer; misfit dislocations; modulation-doped ZnSe/ZnCdSe quantum wells; molecular beam epitaxy; optical properties; spintronics; template effects; time resolved Faraday rotation; two-dimensional electron gas; Crystallography; Electron optics; Epitaxial layers; Gallium arsenide; Gases; Molecular beam epitaxial growth; Optical modulation; Substrates; Surface morphology; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037933

Filename

1037933