Thermoelectric properties of multilayered p-type SiGe thin films

Author

Yammamoto, A. ; Kato, H. ; Kuwashiro, S. ; Takimoto, M. ; Ohta, T. ; Miki, K. ; Sakamoto, K. ; Matsui, T. ; Kamisako, K.

Author_Institution

Electrotech. Lab., Japan

fYear

1997

fDate

26-29 Aug 1997

Firstpage

434

Lastpage

437

Abstract

We fabricated thin films with SiGe/Si multilayered structure by using MBE and evaluated their low temperature transport properties in detail. Boron-doped Si₈₀Ge₂₀ wells separated with 500 A Si barrier layers were formed on highly resistive Si(100) substrate. Measurements of resistivity and Seebeck coefficient clarify that the layered structure has an increasing power factor, α²/ρ, with decreasing well width for temperatures below 300 K

Keywords

Ge-Si alloys; Seebeck effect; boron; electrical resistivity; elemental semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; semiconductor quantum wells; semiconductor superlattices; silicon; thermoelectricity; 500 A; MBE; Seebeck coefficient; Si; Si barrier layers; Si₈₀Ge₂₀:B wells; Si₈₀Ge₂₀:B/Si; SiGe:B-Si; highly resistive Si(100) substrate; low temperature transport properties; multilayered structure; power factor; resistivity; thermoelectric properties; thin films; well width dependence; Conductivity; Germanium silicon alloys; Molecular beam epitaxial growth; Power measurement; Reactive power; Semiconductor thin films; Silicon germanium; Temperature; Thermoelectricity; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on

Conference_Location

Dresden

ISSN

1094-2734

Print_ISBN

0-7803-4057-4

Type

conf

DOI

10.1109/ICT.1997.667179

Filename

667179